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  5. Silicon Carbide Trays Silicon Carbide Trays
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  7. Applications Applications

Silicon Carbide Trays

The Silicon Carbide Trays uses high-purity pressureless sintered silicon carbide ceramic as its raw material, which has the advantages of high hardness, wear resistance, high thermal conductivity, stable mechanical properties at high temperatures, corrosion resistance, etc. The product has high precision and good uniformity of wafer epitaxial layer etching.

The wafer carriers used in the epitaxial growth process are subjected to high temperature and chemical cleaning. Edgetech provides high-purity silicon carbide ceramic carriers that can withstand high temperatures, produce uniform heat distribution, consistent epitaxial layer thickness and resistance, and excellent chemical corrosion resistance.

Silicon Carbide Ceramic Properties

Item Unit SiC
Physical Property
Color \ Black
Density g/cm3 3.1
Mechanical properties
Bending strength(20℃) MPa 400
Compressive strength (20℃) MPa 2200
Elastic modulus (20℃) GPa 400
Fracture toughness (20℃) MPam½ 4
Vickers hardness (HV1) GPa 21
Rockwell hardness(45N) R45N 88
Thermal properties
Coefficient of thermal expansion (20℃-1000℃) 10-6K-1 4
Thermal conductivity W/(m·K) 100-120
Thermal shock stability △T℃ 400
Specific heat capacity J/g·k 0.67
Maximum operating temperature(in air) ℃ 1600
Electrical properties
Volume resistance (20℃) Ω·cm 10^5

Applications Areas of Silicon Carbide Trays

It is mainly used in the ICP etching process of epitaxial layer thin film materials (GaN, SiO2, etc.) of LED wafer chips, precision ceramic parts for semiconductor diffusion, and the MOCVD epitaxial process of semiconductor wafers.

Packing of Silicon Carbide Ceramics

Our Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

Edgetech Industries LLC7938 Liberty Way, Parkland, FL 33067 USAsales@edge-techind.com