AlN Wafer-level Substrate

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Aluminum nitride (AlN) Ceramic wafer-level substrate

Direct wafer bonding technology allows polished semiconductor wafers to be bonded together without the use of adhesives. There is a method for the direct wafer-to-wafer bonding of aluminum nitride to AlN-coated wafers. Direct wafer bonding requires smooth, flat, hydrophilic surfaces that can be activated by appropriately charged hydrogen molecules on the prepared surface. We provide Aluminum nitride (AlN) Ceramic for Direct Wafer Bonding with very smooth (Ra≤0.03um) and flat surfaces.

Edgetech Industries, Advanced Ceramics Division supplies high-quality AlN Wafer-level Substrate at competitive prices.

Aluminum Nitride Ceramic Parameter

Typical characteristic

-Very high thermal conductivity, Ultra-high thermal conductivity ≥230W/m·K

-High insulation capacity

-Low dielectric constant, effective against electronic signal interference

-Low thermal expansion

-Good metallization capacity

-Expansion coefficient can be matched with semiconductor silicon wafer

-Better mechanical strength than alumina

-Good corrosion resistance to molten metal

-Minimum impurity content, non-toxic, high purity

Application of Aluminum Nitride Ceramics

Ceramic Aluminum Nitride Direct Wafer Bonding

Packing

Our AlN ceramic is carefully handled to prevent damage during storage and transportation and to preserve the quality of our product in its original condition.